unisonic technologies co., ltd 2sb1188 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r208-041.b medium power low voltage transistor ? description the utc 2sb1188 is a medium power low voltage transistor, designed for audio power amplifier, dc-dc converter and voltage regulator. ? features *high current output up to 3a *low saturation voltage sot-89 1 lead-free: 2sb1188l halogen-free: 2sb1188g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2sb1188-x-ab3-r 2sb1188l-x-ab3-r 2SB1188G-X-AB3-R sot-89 b c e tape reel
2sb1188 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r208-041.b ? absolute maximum ratings (ta=25c) parameter symbol ratings unit collector -base voltage v cbo -40 v collector -emitter voltage v ceo -30 v emitter -base voltage v ebo -5 v peak collector current i cm -7 a dc collector current i c -3 a base current i b -0.6 a power dissipation p d 0.5 w junction temperature t j +150 c storage temperature t stg -40~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = -50 a -40 v collector emitter breakdown voltage bv ceo i c = -1ma -30 v emitter base breakdown voltage bv ebo i e =-50 a -5 v collector cut-off current i cbo v cb =-30v,i e =0 -1 a emitter cut-off current i ebo v eb =-4v,i c =0 -1 a h fe1 v ce =-2v,ic=-20ma 30 200 dc current gain(note) h fe2 v ce =-2v,ic=-1a 100 150 400 collector-emitter satu ration voltage v ce(sat) ic=-2a,i b =-0.2a -0.3 -0.5 v base-emitter satura tion voltage v be(sat) ic=-2a,i b =-0.2a -1.0 -2.0 v current gain bandwidth product f t v ce =-5v,ic=-0.1a 80 mhz output capacitance cob v cb =-10v,i e =0,f=1mhz 45 pf note: pulse test: p w < 300 s, duty cycle < 2% ? classification of h fe2 rank q p e range 100 ~ 200 160 ~ 320 200 ~ 400
2sb1188 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r208-041.b typical characterics static characteristics -collector-emitter voltage (v) 04 8121620 0 0.4 0.8 1.2 1.6 case temperature, tc (c) -ib=1ma -ib=2ma -ib=3ma -ib=4ma -ib=5ma -ib=6ma -ib=7ma -ib=8ma -ib=9ma derating curve of safe operating areas 200 150 100 50 0 -50 0 50 100 150 s / b l i m i t e d case temperature, tc (c) 200 150 100 50 0 -50 power derating 0 4 8 12 collector output capacitance -collector-base voltage(v) 10 0 10 -1 10 -2 10 -3 10 1 10 2 10 3 10 0 i e =0 f=1mhz current gain-ban dwidth product 10 1 10 2 10 3 10 0 v ce =5v collector-emi tter voltage safe operating area ic(max),dc ic(max),pulse 0.1ms collector current, ic (a) 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 ib=8ma i b =8ma
2sb1188 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r208-041.b ? typical characterics(cont.)
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